Info flash memory K9F2G08U0A, Vellon VP990 DUMP FLASH GPS, wellon, vp-990, pamiec NAND
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K9F2G08R0A
FLASH MEMORY
K9F2G08UXA
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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS
I
N SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life
s
upport, critical care, medical, safety equipment, or similar
applica
t
ions where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procureme
n
t to which special terms or provisions may apply.
*
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1
K9
F
2G
0
8U0A
K9F2G08R0A
FLASH MEMORY
Document Title
256M x 8 Bit NAND Flash Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
Nov. 09. 2005
Advance
0.1
1. 1.8V part is added.
2. tRHW, tCSD parameter is defined.
3. 4G DDP LGA part is deleted.
4. Technical note is added.(p.18)
Mar. 17th. 06
Advance
0.2
1.
FBGA package size is changed
2. 1.8V TSOP is deleted
May 25th 2006
Preliminary
0.
3
1. 1.8V Ioh/Iol condition is changed
2. Min. tADL @ 3.3V is changed form 70n
s
to 100ns
June 1st 2006
Preliminary
0.4
1. 1.8V device supports Copy-Back Program
June 29th 2006
Preliminary
1.0
Aug 23th 2006
Final
1.
1
1. 1.8V AC timing is changed
2. tRPB/tRCB/tREAB is added for 1.8V device
Jan. 15th 2007
1.2
1. tCSD is changed.(10ns -> 0ns)
Mar. 15th 2007
1.
3
1. tCS 31ns -> 25ns, tREH 15ns -> 10ns (@ 1.8V)
June 4th 2007
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change th
e
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any
q
uesti
on
s, ple
as
e co
nta
ct th
e
SAMS
U
NG b
ra
nch o
ffi
ce ne
ar
your
o
ffice.
2
K9
F
2G
0
8U0A
K9F2G08R0A
FLASH MEMORY
2
56M x
8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F
2
G08R0A-J
1.65 ~ 1.95V
FBGA
K9F2G08U0A-P
2.70 ~ 3.60V
X8
TSOP1
K9F
2
G08U0A-I
52ULGA
FEATURES
•
Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.
6
0V
•
Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Regi
s
ter : (2K + 64) x 8bit
•
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
•
Page Read Operation
- Page Size
: (2K + 64)Byte
- Random Read : 25
µ
s(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
•
Fast Write Cycle Time
- Page Program time : 200
µ
s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles
(
with 1bit/512Byte
ECC)
- Data Retention : 10 Years
•
Command Driven Operation
•
Intelligent Copy-Back with internal 1bit/528Byte EDC
•
Unique ID for Copyright Protection
•
Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200
µ
s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins
serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A
′
s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F2G08X0
A
is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
app
lic
ation
s
requi
rin
g non
-v
olatil
ity.
3
K9
F
2G
0
8U0A
K9F2G08R0A
FLASH MEMORY
P
IN CON
F
IGURATION (TSOP1)
K9F2G08U0A-PCB
0
/PIB0
N.C
N.C
N.C
N.C
N.C
N.
C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
AL
WE
WP
N.C
N.C
N.C
N.C
N.C
1
3
5
7
9
10
11
1
13
1
15
1
17
1
19
2
21
2
23
24
48-pin TSO
P
1
Standard Type
12mm x 20mm
48
4
46
4
44
4
42
4
40
3
38
3
36
3
34
3
32
31
3
29
2
27
2
25
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSO
P
1 - 1220F
Unit :mm/Inch
0.787
±
0.008
#1
#48
#24
#25
0.039
±
0.002
0.002
MIN
18.40
±
0.10
1.20
MAX
0.724
±
0.004
0~8
°
0.45~0.75
0.018~0.030
(
0.50
0.020
)
4
K9
F
2G
0
8U0A
20.00
±
0.20
1.00
±
0.05
0.05
0.047
K9F2G08R0A
FLASH MEMORY
P
IN CON
F
IGURATION (FBGA)
K9F2G08R0A-JCB0/JIB0
1 2
3456
N.C N.C
N.C N.C
A
B
C
D
N.C
N.C
N.C
/WP
ALE
Vss
/CE
/WE
R/B
NC
/RE CLE
N
C
N
C NC
NC
NC NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
E
F
NC
NC
NC
NC
NC
NC
NC I/O0
NC
NC
NC Vcc
G
NC
I/O1
NC Vcc I/O5 I/O7
H
Vss
I/O2
I/O3
I/O4
I/O6
Vss
N.C N.C
N.C N.C
N.C
N.C
N.C
N.C
Top View
5
K9
F
2G
0
8U0A
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